Type 2N3499
Geometry
5620
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N3499
Generic Part Number:
2N3499
REF: MIL-PRF-19500/366
Features:
General-purpose silicon transistor
for switching and amplifier appli-
cations.
Housed in
TO-39
case.
Also available in chip form using
the
5620
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/366
which
Semicoa meets in all cases.
Rating
Symbol
Rating
Unit
Collector-Emitter voltage
V
CEO
100
V
Collector-Base Voltage
V
CBO
100
V
Emitter-Base voltage
V
EBO
6.0
V
Collector Current, Continuous
I
C
500
mA
Power Dissipation, T
A
= 25
o
C
5.0
mW
Derate above 25
o
C
28.8
mW/
o
C
Operating Junction Temperature
T
J
-65 to +200
o
C
Storage Temperature
T
STG
-65 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
D
TO-39
Data Sheet No. 2N3499
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A
Collector-Base Cutoff Current
V
CB
= 50 V
Emitter-Base Cutoff Current
V
EB
= 4 V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
100
---
V
V
(BR)CEO
100
---
V
V
V
(BR)EBO
6.0
---
I
CBO
---
50
nA
I
EBO
---
25
nA
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 100 A, V
CE
= 10 V (pulsed)
h
FE1
35
---
---
I
C
= 1.0 mA, V
CE
= 10 V (pulsed)
h
FE2
50
---
---
I
C
= 10 mA, V
CE
= 10 V (pulsed)
h
FE3
75
---
---
I
C
= 150 mA, V
CE
= 10 V (pulsed)
h
FE4
100
300
---
I
C
= 300 mA, V
CE
= 10 V (pulsed)
h
FE6
20
---
---
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
V
BE(sat)1
---
0.8
V dc
I
C
= 300 mA, I
B
= 300 mA
V
BE(sat)3
---
1.4
V dc
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
V
CE(sat)1
---
0.2
V dc
I
C
= 300 mA, I
B
= 30 mA
V
CE(sat)3
---
0.6
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Short Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
V
CE
= 10 V, I
C
= 0.5 mA, Rg = 1 kOhm, 1 kHz
pF
C
IBO
---
80
pF
C
OBO
---
10
|h
FE
|
1.5
8.0
---
NF
---
16
dB
NF
---
6.0
dB
AC h
FE
75
375
---
Switching Characteristics
Symbol
Min
Max
Unit
Saturated Turn On Switching time to 90%
I
C
= 150 mA, I
B1
= 15 mA, V
EB
= 2 V
Saturated Turn Off Switching time to 10%
I
C
= 150 mA, I
B2
= -I
B1
= 15 mA
t
ON
---
115
ns
1150
ns
t
OFF
---
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